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EBD52UD6ADSA-E Datasheet(PDF) 1 Page - Elpida Memory

Part No. EBD52UD6ADSA-E
Description  512MB DDR SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks)
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Maker  ELPIDA [Elpida Memory]
Homepage  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EBD52UD6ADSA-E Datasheet(HTML) 1 Page - Elpida Memory

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Document No. E0604E10 (Ver. 1.0)
Date Published October 2004 (K) Japan
URL: http://www.elpida.com
Elpida Memory , Inc. 2004
DATA SHEET
512MB DDR SDRAM SO-DIMM
EBD52UD6ADSA-E (64M words
× 64 bits, 2 Ranks)
Description
The EBD52UD6ADSA is 64M words
× 64 bits, 2 ranks
Double Data Rate (DDR) SDRAM Small Outline Dual
In-line Memory Module, mounting 8 pieces of 512M
bits DDR SDRAM sealed in TSOP package. Read and
write operations are performed at the cross points of
the CK and the /CK. This high-speed data transfer is
realized by the 2 bits prefetch-pipelined architecture.
Data strobe (DQS) both for read and write are available
for high speed and reliable data bus design. By setting
extended mode register, the on-chip Delay Locked
Loop (DLL) can be set enable or disable. This module
provides high density mounting without utilizing surface
mount technology. Decoupling capacitors are mounted
beside each TSOP on the module board.
Features
• 200-pin socket type small outline dual in line memory
module (SO-DIMM)
 PCB height: 31.75mm
 Lead pitch: 0.6mm
 Lead-free
• 2.5V power supply
• Data rate: 333Mbps/266Mbps (max.)
• 2.5 V (SSTL_2 compatible) I/O
• Double Data Rate architecture; two data transfers per
clock cycle
• Bi-directional, data strobe (DQS) is transmitted
/received with data, to be used in capturing data at
the receiver
• Data inputs, outputs and DM are synchronized with
DQS
• 4 internal banks for concurrent operation
(Components)
• DQS is edge aligned with data for READs; center
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
referenced to both edges of DQS
• Data mask (DM) for write data
• Auto precharge option for each burst access
• Programmable burst length: 2, 4, 8
• Programmable /CAS latency (CL): 2, 2.5
• Refresh cycles: (8192 refresh cycles /64ms)
 7.8µs maximum average periodic refresh interval
• 2 variations of refresh
 Auto refresh
 Self refresh


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