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PMZB550UNE Datasheet(PDF) 8 Page - Nexperia B.V. All rights reserved

Part # PMZB550UNE
Description  30 V, N-channel Trench MOSFET
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Manufacturer  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

PMZB550UNE Datasheet(HTML) 8 Page - Nexperia B.V. All rights reserved

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© Nexperia B.V. 2017. All rights reserved
Nexperia
PMZB550UNE
30 V, N-channel Trench MOSFET
PMZB550UNE
All information provided in this document is subject to legal disclaimers.
Product data sheet
25 March 2015
8 / 15
VGS (V)
0
4
3
1
2
aaa-017181
0.4
0.6
0.2
0.8
1.0
ID
(A)
0
Tj = 150 °C
Tj = 25 °C
VDS > ID × RDSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Tj (°C)
-60
180
120
0
60
aaa-017182
1.0
0.5
1.5
2.0
a
0
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Tj (°C)
-60
180
120
0
60
aaa-017183
0.5
1.0
1.5
VGS(th)
(V)
0
(1)
(2)
(3)
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
aaa-017184
VDS (V)
10-1
102
10
1
10
102
C
(pF)
1
(1)
(2)
(3)
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values


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