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PMZB550UNE Datasheet(PDF) 7 Page - Nexperia B.V. All rights reserved

Part # PMZB550UNE
Description  30 V, N-channel Trench MOSFET
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Manufacturer  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

PMZB550UNE Datasheet(HTML) 7 Page - Nexperia B.V. All rights reserved

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© Nexperia B.V. 2017. All rights reserved
Nexperia
PMZB550UNE
30 V, N-channel Trench MOSFET
PMZB550UNE
All information provided in this document is subject to legal disclaimers.
Product data sheet
25 March 2015
7 / 15
VDS (V)
0
4
3
1
2
aaa-017177
1
2
3
ID
(A)
0
2.5 V
2.0 V
1.8 V
1.5 V
VGS = 4.5 V
1.2 V
3.0 V
Tj = 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-017178
VGS (V)
0
1.5
1
0.5
10-4
10-5
10-3
ID
(A)
10-6
(1)
(2)
(3)
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
aaa-017179
ID (A)
0
3
2
1
1.0
0.5
1.5
2.0
RDSon
(Ω)
0
2.5 V
2.0 V
1.8 V
1.5 V
VGS = 4.5 V
1.2 V
3.0 V
Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
VGS (V)
0
5
4
2
3
1
aaa-017180
1.0
0.5
1.5
2.0
RDSon
(Ω)
0
Tj = 150 °C
Tj = 25 °C
ID = 1 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values


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