NTD12N10T4 datasheet(6/8 Pages) ONSEMI

Part #	NTD12N10T4

Description	Power MOSFET 12 Amps, 100 Volts N?묬hannel Enhancement?묺ode DPAK

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NTD12N10

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SAFE OPERATING AREA

TJ, STARTING JUNCTION TEMPERATURE (°C)

0.1

1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1

100

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.1

0

25

50

75

100

125

40

ID = 12 A

10

175

20

60

80

100

VGS = 20 V

SINGLE PULSE

TC = 25°C

1 ms

100

ms

10 ms

dc

10

ms

t, TIME (s)

0.1

1.0

0.01

0.1

0.2

0.02

D = 0.5

0.05

0.01

SINGLE PULSE

RqJC(t) = r(t) RqJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

110

0.1

0.01

0.001

0.0001

0.00001

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

Figure 13. Thermal Response

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

Figure 14. Diode Reverse Recovery Waveform

150

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NTD12N10T4 Datasheet(PDF) 6 Page - ON Semiconductor

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