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NTP75N03-06 Datasheet(PDF) 3 Page - ON Semiconductor |
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NTP75N03-06 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 8 page NTP75N03−06, NTB75N03−06 http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ. Max Unit OFF CHARACTERISTICS Drain − Source Breakdown Voltage (Note 2) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Negative) V(BR)DSS 30 − −57 − − Vdc mV °C Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS − − − − 1.0 10 mAdc Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (Note 2) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 − 1.6 −6 2.0 − Vdc mV °C Static Drain−to−Source On−Resistance (Note 2) (VGS = 10 Vdc, ID = 37.5 Adc) RDS(on) − 5.3 6.5 m W Static Drain−to−Source On Resistance (Note 2) (VGS = 10 Vdc, ID = 75 Adc) (VGS = 10 Vdc, ID = 37.5 Adc, TJ = 125°C) VDS(on) − − 0.53 0.35 0.68 0.50 Vdc Forward Transconductance (Notes 2 & 4) (VDS = 3 Vdc, ID = 20 Adc) gFS − 58 − Mhos DYNAMIC CHARACTERISTICS (Note 4) Input Capacitance Ciss − 4398 5635 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss − 1160 1894 Transfer Capacitance f = 1.0 MHz) Crss − 317 430 SWITCHING CHARACTERISTICS (Notes 3 and 4) Turn−On Delay Time td(on) − 16 30 ns Rise Time (VGS = 5.0 Vdc, VDD =20Vdc ID =75Adc tr − 130 200 Turn−Off Delay Time VDD = 20 Vdc, ID = 75 Adc, RG = 4.7 W) (Note 2) td(off) − 65 110 Fall Time G )( ) tf − 105 175 Gate Charge (VGS =50Vdc QT − 57 75 nC (VGS = 5.0 Vdc, ID = 75 Adc, V 24 Vdc) (Note 2) Q1 − 11 15 VDS = 24 Vdc) (Note 2) Q2 − 34 50 SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 75 Adc, VGS = 0 Vdc) (IS = 75 Adc, VGS = 0 Vdc, TJ = 125°C) (Note 2) VSD − − 1.19 1.09 1.25 − Vdc Reverse Recovery Time (Note 4) trr − 37 − ns (Note 4) (IS = 75 Adc, VGS = 0 Vdc ta − 20 − Reverse Recovery Stored Charge (Note 4) (IS = 75 Adc, VGS = 0 Vdc dlS/dt = 100 A/ms) (Note 2) tb − 17 − mC Charge (Note 4) QRR − 0.023 − 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. 4. From characterization test data. |
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