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KMM5362203C2W Datasheet(PDF) 6 Page - Samsung semiconductor

Part No. KMM5362203C2W
Description  2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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KMM5362203C2W Datasheet(HTML) 6 Page - Samsung semiconductor

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DRAM MODULE
KMM5362203C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 6 -
CAPACITANCE (TA = 25
°C, VCC=5V, f = 1MHz)
Item
Symbol
Min
Max
Unit
Input capacitance[A0-A9]
Input capacitance[ W]
Input capacitance[ RAS0 , RAS1]
Input capacitance[ CAS0 - CAS3]
Input/Output capacitance[DQ0-35]
CIN1
CIN2
CIN3
CIN4
CDQ
-
-
-
-
-
50
60
35
40
30
pF
pF
pF
pF
pF
Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V, Output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
Max
Min
Max
Random read or write cycle time
tRC
90
110
ns
Access time from RAS
tRAC
50
60
ns
3,4
Access time from CAS
tCAC
13
15
ns
3,4,5
Access time from column address
tAA
25
30
ns
3,10
CAS to output in Low-Z
tCLZ
0
0
ns
3
Output buffer turn-off delay
tOFF
0
15
0
15
ns
6
Transition time(rise and fall)
tT
3
50
3
50
ns
2
RAS precharge time
tRP
30
40
ns
RAS pulse width
tRAS
50
10K
60
10K
ns
RAS hold time
tRSH
13
15
ns
CAS hold time
tCSH
50
60
ns
CAS pulse width
tCAS
13
10K
15
10K
ns
RAS to CAS delay time
tRCD
20
37
20
45
ns
4
RAS to column address delay time
tRAD
15
25
15
30
ns
10
CAS to RAS precharge time
tCRP
5
5
ns
Row address set-up time
tASR
0
0
ns
Row address hold time
tRAH
10
10
ns
Column address set-up time
tASC
0
0
ns
Column address hold time
tCAH
10
10
ns
Column address to RAS lead time
tRAL
25
30
ns
Read command set-up time
tRCS
0
0
ns
Read command hold referenced to CAS
tRCH
0
0
ns
8
Read command hold referenced to RAS
tRRH
0
0
ns
8
Write command hold time
tWCH
10
10
ns
Write command pulse width
tWP
10
10
ns
Write command to RAS lead time
tRWL
13
15
ns
Write command to CAS lead time
tCWL
13
15
ns
Data-in set-up time
tDS
0
0
ns
9
Data-in hold time
tDH
10
10
ns
9
Refresh period
tREF
16
16
ms
Write command set-up time
tWCS
0
0
ns
7
CAS setup time(CAS-before-RAS refresh)
tCSR
5
5
ns
CAS hold time(CAS-before-RAS refresh)
tCHR
10
10
ns
RAS precharge to CAS hold time
tRPC
5
5
ns
Access time from CAS precharge
tCPA
30
35
ns
3
AC CHARACTERISTICS (0
°C≤TA≤70°C, VCC=5.0V±10%. See notes 1,2.)


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