Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF HTML

KMM5361205C2W Datasheet(PDF) 6 Page - Samsung semiconductor

Part No. KMM5361205C2W
Description  1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
Download  17 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo 

KMM5361205C2W Datasheet(HTML) 6 Page - Samsung semiconductor

Zoom Inzoom in Zoom Outzoom out
 6 / 17 page
background image
DRAM MODULE
KMM5361205C2W/C2WG
Rev. 0.0 (Nov. 1997)
- 6 -
CAPACITANCE (TA = 25
°C, VCC=5V, f = 1MHz)
Item
Symbol
Min
Max
Unit
Input capacitance[A0-A9]
Input capacitance[ W]
Input capacitance[ RAS0]
Input capacitance[ CAS0 - CAS3]
Input/Output capacitance[DQ0-35]
CIN1
CIN2
CIN3
CIN4
CDQ1
-
-
-
-
-
30
40
30
25
20
pF
pF
pF
pF
pF
Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V, Output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
Max
Min
Max
Random read or write cycle time
tRC
90
110
ns
Access time from RAS
tRAC
50
60
ns
3,4,10
Access time from CAS
tCAC
15
17
ns
3,4,5
Access time from column address
tAA
25
30
ns
3,10
CAS to output in Low-Z
tCLZ
3
3
ns
3
Output buffer turn-off delay from CAS
tCEZ
3
13
3
15
ns
6,11,12
Transition time(rise and fall)
tT
2
50
2
50
ns
2
RAS precharge time
tRP
30
40
ns
RAS pulse width
tRAS
50
10K
60
10K
ns
RAS hold time
tRSH
13
17
ns
CAS hold time
tCSH
40
50
ns
CAS pulse width
tCAS
8
10K
10
10K
ns
13
RAS to CAS delay time
tRCD
20
37
20
45
ns
4
RAS to column address delay time
tRAD
15
25
15
30
ns
10
CAS to RAS precharge time
tCRP
5
5
ns
Row address set-up time
tASR
0
0
ns
Row address hold time
tRAH
10
10
ns
Column address set-up time
tASC
0
0
ns
Column address hold time
tCAH
8
10
ns
Column address to RAS lead time
tRAL
25
30
ns
Read command set-up time
tRCS
0
0
ns
Read command hold time referenced to CAS
tRCH
0
0
ns
8
Read command hold time referenced to RAS
tRRH
0
0
ns
8
Write command hold time
tWCH
10
10
ns
Write command pulse width
tWP
10
10
ns
Write command to RAS lead time
tRWL
13
15
ns
Write command to CAS lead time
tCWL
13
10
ns
Data-in set-up time
tDS
0
0
ns
9
Data-in hold time
tDH
8
10
ns
9
Refresh period
tREF
16
16
ms
Write command set-up time
tWCS
0
0
ns
7
CAS setup time(CAS-before-RAS refresh)
tCSR
5
5
ns
CAS hold time(CAS-before-RAS refresh)
tCHR
10
10
ns
RAS precharge to CAS hold time
tRPC
5
5
ns
Access time from CAS precharge
tCPA
30
35
ns
3
AC CHARACTERISTICS (0
°C≤TA≤70°C, VCC=5.0V±10%. See notes 1,2.)


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn