X79001 datasheet(5/18 Pages) INTERSIL

Part #	X79001

Description	NV DAC with Selectable Output Range and Memory

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Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

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5 / 18 page

5

FN8147.0

March 17, 2005

ELECTRICAL CHARACTERISTICS (continued)

Symbol

Parameter

Min

Typ

Max

Unit

Test Conditions / Notes

Reference

Vrefout

Output Voltage at VRef at 25°C

1.20

1.21

1.22

V

-20µA < I(VRef) < 0,

Vref as an output

TCOref

Temperature coefficient of VRef

output voltage

50

ppm/

°C

(5)

RVHVL

Resistance between VL and VH

9

11.4

14

k

Ω

VH & VL external

Digital Interface

tOEVALID

OE rising edge to output valid

delay

100

µs

tOEDIS

OE falling edge to high impedance

output delay

100

µs

Cout

SO and RDY pin capacitance

10

pF

Voltage at pin of 0V or Vcc. 1 MHz

signal. (4)

Cin

CLR, CS, SCK, A0, A1, A2, A3, A4,

A5, SI, UP, DOWN, OE

pin capacitance

8pF

IPLDN

On-chip pull down current at A0,

A1, A2, A3, A4, A5, UP, DOWN,

and CLR

0

1

20

µA

Voltage at the pin between 0V and

Vcc

VILSPI

CS, SCK and SI input Low voltage

-0.8

0.2 x

Vcc

V

VIHSPI

CS, SCK and SI input High voltage

0.8 x

Vcc

Vcc +

0.3

V

IINSPI

CS, CLK and SI input current

-1

10

µA

Voltage at the pin between 0V and

Vcc

VOHSO

SO output High voltage

Vcc-

0.4

Vcc

V

I(SO) = -2mA

VOLSO

SO Output Low Voltage

0

0.4

V

I(SO) = 2mA

IOZSO

SO output High impedance current

-20

+20

µA

V(SO) between 0 and Vcc

VOLSO

RDY and SO output Low voltage

0

0.4

V

I(SO) or I(RDY) = 2 mA

IOHRDY

RDY output High current

0

100

µA

V(RDY) = Vcc

VILCMOS

CLR, OE, UP, DOWN, A0, A1, A2,

A3, A4, and A5 input Low voltage

-0.3

0.2 x

Vcc

V

VIHCMOS

CLR, OE, UP, DOWN, A0, A1, and

A2 input High voltage

0.8 x

Vcc

Vcc +

0.3

V

VHYST

CS, SI, SCK, CLR, OE, UP and

DOWN input hysteresis

0.5

V

(5)

Power Requirements

Iccstby

Standby current into Vcc pin

2.5

mA

V(SCK) = V(SI) = 0 V, V(CS) = Vcc

Iccfull

Full operation current into Vcc pin

3

mA

2-wire interface reading from

memory, 2.5 MHz clock at SCK,

V(OE) = VCC, VFB = VBUF (2)

Iccwrite

Nonvolatile Write current into Vcc

3

mA

Average during internal

non-volatile write cycle

X79000, X79001, X79002

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