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FDJ1032C Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDJ1032C Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com February 2005 FDJ1032C Rev. B1(W) FDJ1032C Complementary PowerTrench® MOSFET Features ■ Q1 –2.8 A, –20 V. RDS(ON) = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V ■ Q2 3.2 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ FLMP SC75 package: Enhanced thermal performance in industry-standard package size Applications ■ DC/DC converter ■ Load switch ■ Motor Driving General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet main- tain superior switching performance. These devices are well suited for low voltage and battery pow- ered applications where low in-line power loss and fast switch- ing are required. Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage –20 20 V VGSS Gate-Source Voltage ±8 ±12 V ID Drain Current – Continuous (Note 1a) –2.8 3.2 A – Pulsed –12 12 PD Power Dissipation for Single Operation (Note 1a) 1.5 W (Note 1b) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 80 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1a) 5 3 2 1 4 5 6 Q1 (P) Bottom Drain Contact Bottom Drain Contact Q2 (N) S1 S2 G2 G1 S1 S2 |
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