©2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

February 2005

FDJ1032C Rev. B1(W)

FDJ1032C

Features

■ Q1 –2.8 A, –20 V.

■ Q2 3.2 A, 20 V.

■ Low gate charge

■ High performance trench technology for extremely low

■ FLMP SC75 package: Enhanced thermal performance in

industry-standard package size

Applications

■ DC/DC converter

■ Load switch

■ Motor Driving

General Description

These N & P-Channel MOSFETs are produced using Fairchild

Semiconductor’s advanced PowerTrench process that has been

especially tailored to minimize on-state resistance and yet main-

tain superior switching performance.

These devices are well suited for low voltage and battery pow-

ered applications where low in-line power loss and fast switch-

ing are required.

Symbol

Parameter

Q1

Q2

Units

Drain-Source Voltage

–20

20

V

Gate-Source Voltage

±8

±12

V

Drain Current

– Continuous

(Note 1a)

–2.8

3.2

A

– Pulsed

–12

12

Power Dissipation for Single Operation

(Note 1a)

1.5

W

(Note 1b)

0.9

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

80

°C/W

Thermal Resistance, Junction-to-Case

(Note 1a)

5

3

2

1

4

5

6

Q1 (P)

Bottom Drain Contact

Bottom Drain Contact

Q2 (N)

S1

S2

G2

G1

S1

S2