www.irf.com

1

08/30/05

IRF6648

DirectFET

™ Power MOSFET ‚

DirectFET

™

ISOMETRIC

MN

PD - 97043

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

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Typical values (unless otherwise specified)

Description

achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,

infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods

and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving

previous best thermal resistance by 80%.

The IRF6648 is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a

primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal

performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this

device ideal for high performance isolated DC-DC converters.

l RoHs Compliant Containing No Lead and Bromide

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l Dual Sided Cooling Compatible

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l Optimized for High Frequency Switching

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l Optimized for Synchronous Rectification for 5V

to 12V outputs

l Compatible with Existing Surface Mount Techniques

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Notes:

SH

SJ

SP

MZ

MN

60V max ±20V max 5.5m

Ω@ 10V 36nC 14nC

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

V

Gate-to-Source Voltage

Pulsed Drain Current

e

A

Continuous Source Current (Body Diode)

f

Continuous Source Current (Body Diode)

f

Pulsed Source Current (Body Diode)

e

69

Max.

±20

60

86

260

260

81

52