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A82DL3244TG-70IF Datasheet(PDF) 2 Page - AMIC Technology

Part # A82DL3244TG-70IF
Description  Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
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Manufacturer  AMICC [AMIC Technology]
Direct Link  http://www.amictechnology.com
Logo AMICC - AMIC Technology

A82DL3244TG-70IF Datasheet(HTML) 2 Page - AMIC Technology

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A82DL32x4T(U) Series
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM,
A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only,
Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) Static RAM
Preliminary
PRELIMINARY
(August, 2005, Version 0.0)
1
AMIC Technology, Corp.
DISTINCTIVE CHARACTERISTICS
MCP Features
Single power supply operation 2.7 to 3.6 volt
High Performance
- Access time as fast as 70ns
Package 69-Ball TFBGA (8x11x1.4 mm)
Industrial operating temperature range: -40
°C to 85°C
for –U; -25
°C to 85°C for –I
Flash Features
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
- Data can be continuously read from one bank while
executing erase/program functions in other bank
- Zero latency between read and write operations
Multiple bank architectures
- Three devices available with different bank sizes (refer to
Table 2)
Package
- 69-Ball TFBGA (8x11x1.4 mm)
Top or bottom boot block
Manufactured on 0.18 µm process technology
- Compatible with AM42DL32x4G devices
Compatible with JEDEC standards
- Pinout and software compatible with single-power-supply
flash standard
PERFORMANCE CHARACTERISTICS
High performance
- Access time as fast as 70ns
- Program time: 7µs/word typical utilizing Accelerate
function
Ultra low power consumption (typical values)
- 2mA active read current at 1MHz
- 10mA active read current at 5MHz
- 200nA in standby or automatic sleep mode
Minimum 1 million write cycles guaranteed per sector
20 Year data retention at 125°C
- Reliable operation for the life of the system
SOFTWARE FEATURES
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
- Suspends erase operations to allow programming in
same bank
Data Polling and Toggle Bit
- Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
- Reduces
overall
programming
time
when
issuing
multiple program command sequences
HARDWARE FEATURES
Any combination of sectors can be erased
Ready/ Busy output (RY/BY )
- Hardware method for detecting program or erase cycle
completion
Hardware reset pin (RESET )
- Hardware method of resetting the internal state machine
to reading array data
WP /ACC input pin
- Write protect ( WP ) function allows protection of two
outermost boot sectors, regardless of sector protect
status
- Acceleration (ACC) function accelerates program timing
Sector protection
- Hardware method of locking a sector, either in-system or
using programming equipment, to prevent any program
or erase operation within that sector
- Temporary Sector Unprotect allows changing data in
protected sectors in-system
LP SRAM Features
Power supply range: 2.7V to 3.6V
Access times: 70 ns (max.)
Current:
Very low power version: Operating: 35mA(max.)
Standby: 10uA (max.)
Full static operation, no clock or refreshing required
All inputs and outputs are directly TTL-compatible
Common I/O using three-state output
Output enable and two chips enable inputs for easy
application
Data retention voltage: 2.0V (min.)


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