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STTH20002TV Datasheet(PDF) 2 Page - STMicroelectronics |
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STTH20002TV Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 5 page  STTH20002TV 2/5 ® THERMAL RESISTANCE STATIC ELECTRICAL CHARACTERISTICS (per diode) Pulse test: * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.002 IF 2 (RMS) DYNAMIC CHARACTERISTICS (per diode) Symbol Parameter Maximum Unit Rth(j-c) Junction to case Per diode 0.52 °C/W Total 0.31 Rth(c) Coupling 0.1 °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Symbol Parameter Test conditions Min. Typ Max. Unit IR * Reverse leakage current Tj = 25°C VR = VRRM 100 µA Tj = 125°C 80 800 VF ** Forward voltage drop Tj = 25°C IF = 100A 1.05 V IF = 200A 1.20 Tj = 150°C IF = 100A 0.75 0.85 IF = 200A 1.05 Symbol Parameter Test conditions Min. Typ Max. Unit trr Reverse recovery time Tj = 25°C IF = 1A dIF/dt = 200 A/µs VR =30V 41 50 ns IRM Reverse recovery current Tj = 125°C IF = 100A VR = 160V dIF/dt = 200 A/µs 11.5 15 A tfr Forward recovery time Tj = 25°C IF = 100A dIF/dt = 200 A/µs VFR = 1.1 x VFmax 800 ns VFP Forward recovery voltage Tj = 25°C IF = 100A dIF/dt = 200 A/µs 2.5 V |
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