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S6D0114 Datasheet(PDF) 98 Page - Samsung semiconductor |
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S6D0114 Datasheet(HTML) 98 Page - Samsung semiconductor |
98 / 143 page 132-RGB X 176-DOT 1-CHIP DRIVER IC FOR 262,144-COLOR TFT-LCD DISPLAY S6D0114 Preliminary 98 An example of high-speed RAM write with a window address-range specified is shown below. The window address-range can be accessed consecutively and quickly by inserting two dummy writes at the start of a row and three dummy writes at the end of a row, as determined by using the window address-range specification bits (HSA1 to 0=10, HEA1 to 0=00). Writing in the horizontal direction AM=0, ID0=1 Window address-range setting HSA=h12, HEA=h30 VSA=h08, VEA=hA0 High-speed RAM write mode setting HWM=1 Address set AD=h0810* Dummy RAM write X 2 RAM write X 31 Dummy RAM write X 3 X 153 h0000 hAF83 Window address range specification (rewritable area) h0812 hA030 Window address-range setting HSA=h12, HEA=h30 VSA=h08, VEA=hA0 NOTE: The address set for the high-speed RAM write must be 00 or 11 according to the value of the ID0 bit. Only pre-specified window address-range will be overwritten. GRAM address map Figure 68. Example of High-speed RAM Write with a window address-range specification |
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