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April 7, 2005
U630H64
DC Characteristics
Symbol
Conditions
C-Type
K-Type
Unit
Min.
Max.
Min.
Max.
Output High Voltage
Output Low Voltage
VOH
VOL
VCC
IOH
IOL
= 4.5 V
=-4 mA
= 8 mA
2.4
0.4
2.4
0.4
V
V
Output High Current
Output Low Current
IOH
IOL
VCC
VOH
VOL
= 4.5 V
= 2.4 V
= 0.4 V
8
-4
8
-4
mA
mA
Input Leakage Current
High
Low
IIH
IIL
VCC
VIH
VIL
= 5.5 V
= 5.5 V
=
0 V
-1
1
-1
1
µA
µA
Output Leakage Current
High at Three-State- Output
Low at Three-State- Output
IOHZ
IOLZ
VCC
VOH
VOL
= 5.5 V
= 5.5 V
=
0 V
-1
1
-1
1
µA
µA
SRAM Memory Operations
No.
Switching Characteristics
Read Cycle
Symbol
25
35
45
Unit
Alt.
IEC
Min. Max. Min. Max. Min. Max.
1
Read Cycle Timef
tAVAV
tcR
25
35
45
ns
2
Address Access Time to Data Validg
tAVQV
ta(A)
25
35
45
ns
3
Chip Enable Access Time to Data Valid
tELQV
ta(E)
25
35
45
ns
4
Output Enable Access Time to Data Valid
tGLQV
ta(G)
12
20
25
ns
5E HIGH to Output in High-Zh
tEHQZ
tdis(E)
13
17
20
ns
6G HIGH to Output in High-Zh
tGHQZ
tdis(G)
13
17
20
ns
7E LOW to Output in Low-Z
tELQX
ten(E)
555
ns
8G LOW to Output in Low-Z
tGLQX
ten(G)
000
ns
9
Output Hold Time after Addr. Changeg
tAXQX
tv(A)
333
ns
10 Chip Enable to Power Activee
tELICCH
tPU
000
ns
11 Chip Disable to Power Standbyd, e
tEHICCL
tPD
25
35
45
ns
e: Parameter guaranteed but not tested.
f:
Device is continuously selected with E and G both LOW.
g: Address valid prior to or coincident with E transition LOW.
h: Measured
± 200 mV from steady state output voltage.
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