EN29LV040A datasheet(20/35 Pages) EON | 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

Part No.	EN29LV040A

Description	4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

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Manufacturer	EON [Eon Silicon Solution Inc.]

Direct Link	http://www.essi.com.tw

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This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

20

EN29LV040A

Rev. A, Issue Date: 2005/08/16

Table 7. DC Characteristics

(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

ILI

Input Leakage Current

0V

≤ VIN ≤ Vcc

±1

µA

ILO

Output Leakage Current

0V

≤ VOUT ≤ Vcc

±1

µA

ICC1

Supply Current (read - CMOS)

CE# = VIL; OE# = VIH;

f = 5MHz

7

12

mA

ICC2

Supply Current (Standby - CMOS)

CE# = Vcc ± 0.3V

1

5.0

µA

ICC3

Supply Current (Program or Erase)

Byte program, Sector or

Chip Erase in progress

15

30

mA

ICC4

Automatic Sleep Mode

VIH = Vcc ± 0.3 V

VIL = Vss ± 0.3 V

1

5.0

µA

VIL

Input Low Voltage

-0.5

0.8

V

VIH

Input High Voltage

0.7 x

Vcc

Vcc ±

0.3

V

VOL

Output Low Voltage

IOL = 4.0 mA

0.45

V

VOH

Output High Voltage TTL

IOH = -2.0 mA

0.85 x

Vcc

V

Output High Voltage CMOS

IOH = -100 µA,

Vcc -

0.4V

V

VID

A9 Voltage (Electronic Signature)

10.5

11.5

V

IID

A9 Current (Electronic Signature)

A9 = VID

100

µA

VLKO

Supply voltage (Erase and

Program lock-out)

2.3

2.5

V

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