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K4S641632H Datasheet(PDF) 8 Page - Samsung semiconductor

Part # K4S641632H
Description  64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
Download  14 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4S641632H Datasheet(HTML) 8 Page - Samsung semiconductor

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SDRAM 64Mb H-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.3 August 2004
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S6404(08)32H-TC**
4. K4S6404(08)32H-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
Notes :
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C for x4, x8)
Parameter
Symbol
Test Condition
Version
Unit
Note
75
Operating current
(One bank active)
ICC1
Burst length = 1
tRC
≥ tRC(min)
IO = 0 mA
75
mA
1
Precharge standby current in
power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 10ns
1
mA
ICC2PS
CKE & CLK
≤ VIL(max), tCC = ∞
1
Precharge standby current in
non power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
15
mA
ICC2NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
6
Active standby current in
power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 10ns
3
mA
ICC3PS
CKE & CLK
≤ VIL(max), tCC = ∞
3
Active standby current in
non power-down mode
(One bank active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
30
mA
ICC3NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
25
Operating current
(Burst mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
115
mA
1
Refresh current
ICC5
tRC
≥ tRC(min)
135
mA
2
Self refresh current
ICC6
CKE
≤ 0.2V
C1
mA
3
L
400
uA
4
DC CHARACTERISTICS


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