PSMN004-60B datasheet(7/13 Pages) PHILIPS

Part #	PSMN004-60B

Description	N-channel enhancement mode field-effect transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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7 / 13 page

Philips Semiconductors

PSMN004-60P/60B

N-channel enhancement mode ﬁeld-effect transistor

Product data

Rev. 01 — 26 April 2002

7 of 13

9397 750 09156

ID = 1 mA; VDS =VGS

Tj =25 °C; VDS =5V

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

VGS =0V;f=1MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

03aa32

0

1

2

3

4

5

-60

0

60

120

180

Tj (

oC)

VGS(th)

(V)

max

min

typ

03aa35

10-6

10-5

10-4

10-3

10-2

10-1

02

46

VGS (V)

ID

(A)

max

typ

min

03ah87

102

103

104

105

10-1

1

10

102

VDS (V)

C

(pF)

Ciss

Coss

Crss

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PSMN004-60B Datasheet(PDF) 7 Page - NXP Semiconductors

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