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Die Characteristics

DIE DIMENSIONS:

4820

µm x 3300µm (190 mils x 130 mils)

Thickness: 483

µm ±25.4µm (19 mils ±1 mil)

INTERFACE MATERIALS:

Glassivation:

Type: PSG (Phosphorous Silicon Glass)

Thickness: 8.0k

Top Metallization:

Type: ALSiCu

Thickness: 16.0k

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION:

Worst Case Current Density:

Transistor Count:

542

Metallization Mask Layout

IS-2100ARH

SD (13)

LIN (14)

COM (2)

HIN (12)

HO (8)

VB (7)

VS (6)

LO (1)

IS-2100ARH