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IS61LV12816-15KI Datasheet(PDF) 10 Page - Integrated Circuit Solution Inc

Part # IS61LV12816-15KI
Description  128K x 16 HIGH-SPEED CMOS STATIC RAM
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Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IS61LV12816-15KI Datasheet(HTML) 10 Page - Integrated Circuit Solution Inc

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IS61LV12816
10
Integrated Circuit Solution, Inc.
SR023_0C
WRITE CYCLE NO. 4 (1,3)(LB, UB Controlled, Back-to-Back Write)
DATA UNDEFINED
t WC
ADDRESS 1
ADDRESS 2
t WC
HIGH-Z
t PWB
WORD 1
LOW
WORD 2
t HD
t SA
t HZWE
ADDRESS
CE
UB, LB
WE
DOUT
DIN
OE
DATAIN
VALID
t LZWE
t SD
t PWB
DATAIN
VALID
t SD
t HD
t SA
t HA
t HA
Notes:
1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The
tSA, tHA, tSD, and tHD timing is
referenced to the rising or falling edge of the signal that terminates the Write.
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.


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