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BS62LV2008 Datasheet(PDF) 6 Page - Brilliance Semiconductor

Part No. BS62LV2008
Description  Very Low Power/Voltage CMOS SRAM 256K X 8 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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BS62LV2008 Datasheet(HTML) 6 Page - Brilliance Semiconductor

  BS62LV2008 Datasheet HTML 1Page - Brilliance Semiconductor BS62LV2008 Datasheet HTML 2Page - Brilliance Semiconductor BS62LV2008 Datasheet HTML 3Page - Brilliance Semiconductor BS62LV2008 Datasheet HTML 4Page - Brilliance Semiconductor BS62LV2008 Datasheet HTML 5Page - Brilliance Semiconductor BS62LV2008 Datasheet HTML 6Page - Brilliance Semiconductor BS62LV2008 Datasheet HTML 7Page - Brilliance Semiconductor BS62LV2008 Datasheet HTML 8Page - Brilliance Semiconductor BS62LV2008 Datasheet HTML 9Page - Brilliance Semiconductor  
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R0201-BS62LV2008
Revision 1.1
Jan.
2004
6
BSI
BS62LV2008
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WR1
t WC
(3)
t CW
(11)
(11)
t CW
(2)
t WP
t AW
t OHZ
(4,10)
t AS
t WR2
(3)
t DH
t DW
D
IN
D
OUT
WE
CE2
CE1
OE
ADDRESS
(5)
(5)
AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
CYCLE TIME : 55ns
(Vcc = 4.5~5.5V)
(Vcc = 4.5~5.5V)
UNIT
t
AVAX
t
WC
Write Cycle Time
55
--
--
70
--
--
ns
t
E1LWH
t
CW
Chip Select to End of Write
55
--
--
70
--
--
ns
t
AVWL
t
AS
Address Setup Time
0
--
--
0
--
--
ns
t
AVWH
t
AW
Address Valid to End of Write
55
--
--
70
--
--
ns
t
WLWH
t
WP
Write Pulse Width
30
--
--
35
--
--
ns
t
WHAX
t
WR1
Write recovery Time
(CE1,WE)
0
--
--
0
--
--
ns
t
E2LAX
t
WR2
(CE2)
0
--
--
0
--
--
ns
t
WLQZ
t
WHZ
Write to Output in High Z
--
--
25
--
--
30
ns
t
DVWH
t
DW
Data to Write Time Overlap
25
--
--
30
--
--
ns
t
WHDX
t
DH
Data Hold from Write Time
0
--
--
0
--
--
ns
t
GHQZ
t
OHZ
Output Disable to Output in High Z
--
--
25
--
--
30
ns
t
WHOX
t
OW
End of Write to Output Active
5----5
--
--
ns
MIN. TYP. MAX.
MIN. TYP. MAX.
Write recovery Time
CYCLE TIME : 70ns


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