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SUD50N03-09P Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SUD50N03-09P
Description  N-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SUD50N03-09P Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFET
D Optimized for High- or Low-Side
D 100% Rg Tested
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
SUD50N03-09P
Vishay Siliconix
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)b
30
0.0095 @ VGS = 10 V
63b
30
0.014 @ VGS = 4.5 V
52b
D
G
S
N-Channel MOSFET
TO-252
S
GD
Top View
Drain Connected to Tab
Ordering Information: SUD50N03-09P
SUD50N03-09P—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Currenta
TC = 25_C
ID
63b
Continuous Drain Currenta
TC = 100_C
ID
44.5b
Pulsed Drain Current
IDM
50
A
Continuous Source Current (Diode Conduction)a
IS
10
Avalanche Current
L = 0 1 mH
IAS
35
Single Pulse Avalanche Energy
L = 0.1 mH
EAS
61
mJ
Maximum Power Dissipation
TC = 25_C
PD
65.2
W
Maximum Power Dissipation
TA = 25_C
PD
7.5a
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambienta
t v 10 sec
R
16
20
Maximum Junction-to-Ambienta
Steady State
RthJA
40
50
_C/W
Maximum Junction-to-Case
RthJC
1.8
2.3
C/W
Notes
a.
Surface Mounted on FR4 Board, t v 10 sec.
b.
Based on maximum allowable Junction Temperature, package limitation current is 50 A.


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