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CAT24FC65 Datasheet(PDF) 2 Page - Catalyst Semiconductor

Part No. CAT24FC65
Description  64K-Bit I2C Serial CMOS EEPROM with Partial Array Write Protection
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Maker  CATALYST [Catalyst Semiconductor]
Homepage  http://www.catalyst-semiconductor.com
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CAT24FC65 Datasheet(HTML) 2 Page - Catalyst Semiconductor

 
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CAT24FC65/66
2
Doc. No. 1047, Rev. H
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55
°C to +125°C
Storage Temperature ....................... –65
°C to +150°C
Voltage on Any Pin with
Respect to Ground(1) ........... –2.0V to +VCC + 2.0V
VCC with Respect to Ground ............... –2.0V to +7.0V
*COMMENT
Stresses above those listed under “Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions
outside of those listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for extended periods
may affect device performance and reliability.
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC + 2.0V for periods of less than 20ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.
(5) Standby current (ISB ) = 10 µA max at extended temperature range.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ICC1
Power Supply Current - Read
fSCL = 400 KHz
400
µA
VCC=5V
ICC2
Power Supply Current - Write
fSCL = 400KHz
3
mA
VCC=5V
ISB(5)
Standby Current
VIN = GND or VCC
1
µA
VCC=5V
ILI
Input Leakage Current
VIN = GND to VCC
1
µA
ILO
Output Leakage Current
VOUT = GND to VCC
1
µA
VIL
Input Low Voltage
-0.5
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 0.5
V
VOL1
Output Low Voltage (VCC = +3.0V)
IOL = 3.0 mA
0.4
V
RELIABILITY CHARACTERISTICS (3)
Symbol
Parameter
Min
Typ
Max
Units
NEND
Endurance
1,000,000
Cycles/Byte
TDR
Data Retention
100
Years
VZAP
ESD Susceptibility
4000
Volts
ILTH(4)
Latch-up
100
mA
CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V
Symbol
Test
Conditions
Min
Typ
Max
Units
CI/O(3)
Input/Output Capacitance (SDA)
VI/O = 0V
8
pF
CIN(3)
Input Capacitance (SCL, WP, A0, A1)
VIN = 0V
6
pF
ZWPL
WP Input Impedance
VIN ≤ 0.5V
5
70
k
ZWPH
WP Input Impedance
VIN>0.7VxVCC
500
k
D.C. OPERATING CHARACTERISTICS
VCC = +2.5V to +5.5V, unless otherwise specified.
Package Power Dissipation
Capability (Ta = 25
°C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°C
Output Short Circuit Current(2) ........................ 100mA


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