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BCR8UM Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. BCR8UM
Description  MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

BCR8UM Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

  BCR8UM Datasheet HTML 1Page - Mitsubishi Electric Semiconductor BCR8UM Datasheet HTML 2Page - Mitsubishi Electric Semiconductor BCR8UM Datasheet HTML 3Page - Mitsubishi Electric Semiconductor BCR8UM Datasheet HTML 4Page - Mitsubishi Electric Semiconductor BCR8UM Datasheet HTML 5Page - Mitsubishi Electric Semiconductor  
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Feb.1999
23
102
57 103
3.2
0
23
10–1
57 100 23 5 7 101 23 5 7 102
1.6
1.2
0.8
0.4
2.0
2.4
2.8
10–1
23
101
57 102 23 5 7 103 23 5 7 104
101
7
5
3
2
100
7
5
3
2
7
5
3
2
VGT = 1.5V
PG(AV) = 0.5W
VGM = 10V
PGM = 5W
IGM = 2A
IFGT I , IRGT I , IRGT III
VGD = 0.2V
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
TYPICAL EXAMPLE
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
TYPICAL EXAMPLE
16
12
10
6
2
0
16
8
2
0
4
6
10
12
14
4
8
14
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
16
8
2
0
4
6
10
12
14
40
80
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
GATE CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE


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