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FFB3904D Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part No. FFB3904D
Description  Dual General Purpose Transistor
Download  8 Pages
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Maker  FS [First Silicon Co., Ltd]
Homepage  http://www.firstsilicon.co.kr/
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FFB3904D Datasheet(HTML) 2 Page - First Silicon Co., Ltd

   
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ELECTRICAL CHARACTERISTICS (TA =25℃ unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
60
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
Vdc
Base Cutoff Current
(VCE = 30 Vdc, V EB = 3.0 Vdc)
IBL
50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, V EB = 3.0 Vdc)
ICEX
50
nAdc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 0.1 mAdc, V CE = 1.0 Vdc)
(IC = 1.0 mAdc, V CE = 1.0 Vdc)
(IC = 10 mAdc, V CE = 1.0 Vdc)
(IC = 50 mAdc, V CE = 1.0 Vdc)
(IC = 100 mAdc, V CE = 1.0 Vdc)
hFE
40
70
100
60
30
300
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, I B = 1.0 mAdc)
(IC = 50 mAdc, I B = 5.0 mAdc)
VCE(sat)
0.2
0.3
Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, I B = 1.0 mAdc)
(IC = 50 mAdc, I B = 5.0 mAdc)
VBE(sat)
0.65
0.85
0.95
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mAdc, V CE = 20 Vdc, f = 100 MHz)
fT
300
MHz
Output Capacitance
(VCB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
Cobo
4.0
pF
Input Capacitance
(VEB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Cibo
8.0
pF
2. Pulse Test: Pulse Width
≤ 300 µs; Duty Cycle ≤2.0%.
2008. 03. 10
2/8
FFB3904D
Revision No : 0


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