SI7970DP-T1-E3 datasheet(2/5 Pages) VISHAY

Part #	SI7970DP-T1-E3

Description	Dual N-Channel 40-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si7970DP

Vishay Siliconix

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www.vishay.com

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Document Number: 72826

S-40431—Rev. A, 15-Mar-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1

3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V, TJ = 55_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

30

A

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 10.2 A

0.016

0.019

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 8.7 A

0.021

0.026

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 10.2 A

26

S

Diode Forward Voltagea

VSD

IS = 2.9 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

23

35

Gate-Source Charge

Qgs

VDS =20 V, VGS = 10 V, ID = 10.2 A

4.4

nC

Gate-Drain Charge

Qgd

5.6

Gate Resistance

Rg

f = 1 MHz

1

2.3

3.9

W

Turn-On Delay Time

td(on)

15

25

Rise Time

tr

VDD = 20 V, RL = 20 W

15

25

Turn-Off Delay Time

td(off)

VDD = 20 V, RL = 20 W

ID ^ 1 A, VGEN = 10 V, Rg = 6 W

50

75

ns

Fall Time

tf

16

25

Source-Drain Reverse Recovery Time

trr

IF = 2.9 A, di/dt = 100 A/ms

30

60

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

8

16

24

32

40

012345

0

8

16

24

32

40

012345

VGS = 10 thru 6 V

TC = 125_C

−55_C

5 V

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

4 V

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SI7970DP-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix

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