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SI7970DP-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7970DP-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si7970DP Vishay Siliconix New Product www.vishay.com 2 Document Number: 72826 S-40431—Rev. A, 15-Mar-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 10.2 A 0.016 0.019 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 8.7 A 0.021 0.026 W Forward Transconductancea gfs VDS = 15 V, ID = 10.2 A 26 S Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg 23 35 Gate-Source Charge Qgs VDS =20 V, VGS = 10 V, ID = 10.2 A 4.4 nC Gate-Drain Charge Qgd 5.6 Gate Resistance Rg f = 1 MHz 1 2.3 3.9 W Turn-On Delay Time td(on) 15 25 Rise Time tr VDD = 20 V, RL = 20 W 15 25 Turn-Off Delay Time td(off) VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 50 75 ns Fall Time tf 16 25 Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms 30 60 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 8 16 24 32 40 012345 0 8 16 24 32 40 012345 VGS = 10 thru 6 V TC = 125_C −55_C 5 V 25_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 4 V |
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