IC41C8513 and IC41LV8513

2

Integrated Circuit Solution Inc.

DR028-0A 09/25/2001

FEATURES

• Fast Page Mode Access Cycle

• TTL compatible inputs and outputs

• Refresh Interval:

-- 1,024 cycles/16 ms

• Refresh Mode:

RAS-Only,

CAS-before-RAS (CBR), and Hidden

• JEDEC standard pinout

• Single power supply:

5V ± 10% or 3.3V ± 10%

• Byte Write and Byte Read operation via

two

CAS

DESCRIPTION

The

CMOS Dynamic Random Access Memory. The Fast Page

Mode allows 1,024 random accesses within a single row with

access cycle time as short as 12 ns per 8-bit word.

These features make the 8513 Series ideally suited for high-

bandwidth graphics, digital signal processing, high-performance

computing systems, and peripheral applications.

The 8513 Series is packaged in a 28-pin 400mil SOJ and a 28

pin TSOP-2

512K x 8 (4-MBIT) DYNAMIC RAM

WITH FAST PAGE MODE

KEY TIMING PARAMETERS

Parameter

-

35

-50

-

60 Unit

50

60

ns

14

15

ns

25

30

ns

20

25

ns

60

90

110

ns

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors

which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.

PRODUCT SERIES OVERVIEW

Part No.

Refresh

Voltage

IC41C8513

1K

5V ± 10%

IC41LV8513

1K

3.3V ± 10%

PIN DESCRIPTIONS

A0-A9

Address Inputs

I/O0-7

Data Inputs/Outputs

WE

Write Enable

OE

Output Enable

RAS

Row Address Strobe

CAS

Column Address Strobe

Vcc

Power

GND

Ground

PIN CONFIGURATION

28 Pin SOJ, TSOP-2

1

2

3

4

5

6

7

8

9

10

11

12

13

14

28

27

26

25

24

23

22

21

20

19

18

17

16

15

VCC

I/O0

I/O1

I/O2

I/O3

NC

WE

RAS

A9

A0

A1

A2

A3

VCC

GND

I/O7

I/O6

I/O5

I/O4

CAS

OE

NC

A8

A7

A6

A5

A4

GND