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IDB45E60 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IDB45E60 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page 2003-07-31 Rev.2 Page 1 IDP45E60 IDB45E60 Fast Switching EmCon Diode Product Summary VRRM 600 V IF 45 A VF 1.5 V Tjmax 175 °C Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175°C operating temperature • Easy paralleling P-TO220-3.SMD P-TO220-2-2. Pin 1 PIN 2 PIN 3 C A - NC C A Marking D45E60 D45E60 Type Package Ordering Code IDP45E60 P-TO220-2-2. Q67040-S4469 IDB45E60 P-TO220-3.SMD Q67040-S4375 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 600 V Continous forward current TC=25°C TC=90°C IF 71 47 A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave IFSM 162 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 IFRM 111.5 Power dissipation TC=25°C TC=90°C Ptot 187 106 W Operating and storage temperature Tj , Tstg -55...+175 °C Soldering temperature 1.6mm(0.063 in.) from case for 10s TS 255 °C |
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