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UPD441000LGW-D15X Datasheet(PDF) 1 Page - NEC |
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UPD441000LGW-D15X Datasheet(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1998 MOS INTEGRATED CIRCUIT µµµµPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION DATA SHEET Document No. M13714EJ5V0DSJ1 (5th edition) Date Published December 2000 NS CP (K) Printed in Japan The mark • • • • shows major revised points. Description The µPD441000L-X is a high speed, low power, 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM. The µPD441000L-X has two chip enable pins (/CE1, CE2) to extend the capacity. The µPD441000L-X is packed in 32-pin plastic SOP and 32-pin plastic TSOP (I) (8×13.4 mm) and (8×20 mm). Features • 131,072 words by 8 bits organization • Fast access time : 70, 85, 100, 120, 150 ns (MAX.) • Low voltage operation (B version : VCC = 2.7 to 3.6 V, C version : VCC = 2.2 to 3.6 V, D version : VCC = 1.8 to 3.6 V) • Low VCC data retention (B version : 2.0 V (MIN.), C version, D version : 1.5 V (MIN.)) • Operating ambient temperature : TA = –25 to +85 °C • Output Enable input for easy application • Two Chip Enable inputs : /CE1, CE2 Part number Access time Operating supply Operating ambient Supply current ns (MAX.) voltage temperature At operating At standby At data retention V °C mA (MAX.) µA (MAX.) µA (MAX.) µPD441000L-BxxX 70, 85, 100 2.7 to 3.6 −25 to +85 25 2 2 Note µPD441000L-CxxX 100, 120 2.2 to 3.6 µPD441000L-DxxX 120, 150 1.8 to 3.6 Note 0.5 µA (TA ≤ 40 °C) 5 |
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