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UPD442000AGU-BB70X-9JH Datasheet(PDF) 1 Page - NEC |
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UPD442000AGU-BB70X-9JH Datasheet(HTML) 1 Page - NEC |
1 / 28 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 2000 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION MOS INTEGRATED CIRCUIT µµµµPD442000A-X DATA SHEET Document No. M14669EJ7V0DS00 (7th edition) Date Published October 2002 NS CP (K) Printed in Japan The mark 5 5 5 5 shows major revised points. Description The µPD442000A-X is a high speed, low power, 2,097,152 bits (262,144 words by 8 bits) CMOS static RAM. The µPD442000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. The µPD442000A-X is packed in 32-pin PLASTIC TSOP (I) (Normal bent) and 32-pin PLASTIC TSOP (I) (Reverse bent). Features • 262,144 words by 8 bits organization • Fast access time : 55, 70, 85, 100, 120 ns (MAX.) • Low voltage operation : VCC = 2.7 to 3.6 V (-BB55X, -BB70X, -BB85X) VCC = 2.2 to 3.6 V (-BC70X, -BC85X, -BC10X) VCC = 1.8 to 2.2 V (-DD85X, -DD10X, -DD12X) • Low VCC data retention : 1.0 V (MIN.) • Operating ambient temperature : TA = –25 to +85 °C • Output Enable input for easy application • Two Chip Enable inputs : /CE1, CE2 µPD442000A Access time Operating supply Operating ambient Supply current ns (MAX.) voltage temperature At operating At standby At data retention V°C mA (MAX.) µA (MAX.) µA (MAX.) -BB55X, -BB70X, -BB85X 55, 70, 85 2.7 to 3.6 −25 to +85 30 Note 21 -BC70X, -BC85X, -BC10X 70, 85, 100 2.2 to 3.6 30 -DD85X, -DD10X, -DD12X 85, 100, 120 1.8 to 2.2 15 1.5 Note Cycle time ≥ 70 ns, -BB55X : 35 mA |
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