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UPD29F064115GZ-DB80X-MJH Datasheet(PDF) 22 Page - NEC

Part # UPD29F064115GZ-DB80X-MJH
Description  64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

UPD29F064115GZ-DB80X-MJH Datasheet(HTML) 22 Page - NEC

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Data Sheet M16062EJ2V0DS
22
µµµµPD29F064115-X
Write Cycle (Program / Erase)
(1/2)
Parameter
Symbol
-DB80X
-DB85X
-EB90X
Unit
Note
-EB85X
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
Write cycle time
tWC
80
85
90
ns
Address setup time (/WE to address)
tAS
000
ns
Address setup time (/CE to address)
tAS
000
ns
Address hold time (/WE to address)
tAH
45
45
45
ns
Address hold time (/CE to address)
tAH
45
45
45
ns
Input data setup time
tDS
45
45
45
ns
Input data hold time
tDH
000
ns
/OE hold time
Read
tOEH
000
ns
Toggle bit, Data polling
10
10
10
Read recovery time before write (/OE to /CE)tGHEL
000
ns
Read recovery time before write (/OE to /WE)tGHWL
000
ns
/WE setup time (/CE to /WE)
tWS
000
ns
/CE setup time (/WE to /CE)
tCS
000
ns
/WE hold time (/CE to /WE)
tWH
000
ns
/CE hold time (/WE to /CE)
tCH
000
ns
Write pulse width
tWP
35
35
35
ns
/CE pulse width
tCP
35
35
35
ns
Write pulse width high
tWPH
30
30
30
ns
/CE pulse width high
tCPH
30
30
30
ns
Word programming operation time
tWPG
11
200
11
200
11
200
µs
Chip programming operation time
tCPG
47
840
47
840
47
840
s
Sector erase
4K words sector
tSER
0.15
1.0
0.15
1.0
0.15
1.0
s
1,2
operation time
32K words sector
0.5
1.5
0.5
1.5
0.5
1.5
4K words sector
0.5
3.0
0.5
3.0
0.5
3.0
1,3
32K words sector
0.7
5.0
0.7
5.0
0.7
5.0
Chip erase operation time
tCER
65.4
205
65.4
205
65.4
205
s
1,2
96.2
678
96.2
678
96.2
678
1,3
Accelerated programming time
tACCPG
7
150
7
150
7
150
µs
Program / erase cycle
300,000
300,000
300,000
cycle
VCC setup time
tVCS
200
200
200
µs
RY (/BY) recovery time
tRB
000
ns
/RESET pulse width
tRP
500
500
500
ns
/RESET high-voltage (VID) hold time from high of
tRRB
20
20
20
µs
RY (/BY) when sector group is temporarily unprotect
/RESET hold time
tRH
50
50
50
ns
Notes 1. The preprogramming time prior to the erase operation is not included.
2. Program / erase cycle : 100,000 cycles
3. Program / erase cycle : 300,000 cycles


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