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10C135 Datasheet(PDF) 2 Page - Advanced Power Electronics Corp.

Part # 10C135
Description  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

10C135 Datasheet(HTML) 2 Page - Advanced Power Electronics Corp.

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N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
-
V
VGS=10V, ID=2A
-
-
135
mΩ
VGS=5V, ID=1A
-
-
250
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=2A
-
11
17.6
nC
Qgs
Gate-Source Charge
VDS=50V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
7
-
ns
tr
Rise Time
ID=1A
-
4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-16
-
ns
tf
Fall Time
VGS=10V
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
960
pF
Coss
Output Capacitance
VDS=50V
-
35
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
25
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
3.6
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1.5A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=2A, VGS=0V
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
2
AP10C135M
RDS(ON)
Static Drain-Source On-Resistance
2
.


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