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UPD23C16340 Datasheet(PDF) 1 Page - NEC |
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UPD23C16340 Datasheet(HTML) 1 Page - NEC |
1 / 20 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS INTEGRATED CIRCUIT µµµµPD23C16340, 23C16380 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Document No. M15709EJ2V0DS00 (2nd edition) Date Published February 2003 NS CP(K) Printed in Japan DATA SHEET The mark shows major revised points. 2001 Description The µPD23C16340 and µPD23C16380 are 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 2,097,152 words by 8 bits, WORD mode : 1,048,576 words by 16 bits). The active levels of OE (Output Enable Input) can be selected with mask-option. The µPD23C16340 and µPD23C16380 are packed in 48-pin PLASTIC TSOP(I) and 48-pin TAPE FBGA. Features • Pin compatible with NOR Flash Memory • Word organization 2,097,152 words by 8 bits (BYTE mode) 1,048,576 words by 16 bits (WORD mode) • Page access mode BYTE mode : 8 byte random page access ( µPD23C16340) 16 byte random page access ( µPD23C16380) WORD mode : 4 word random page access ( µPD23C16340) 8 word random page access ( µPD23C16380) • Operating supply voltage : VCC = 2.7 V to 3.6 V Operating supply Access time / Power supply current (Active mode) Standby current voltage Page access time mA (MAX.) (CMOS level input) VCC ns (MAX.) µPD23C16340 µPD23C16380 µA (MAX.) 3.0 V ± 0.3 V 90 / 25 40 55 30 3.3 V ± 0.3 V 85 / 25 |
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