PHE13009 datasheet(2/8 Pages) WEEN

Part #	PHE13009

Description	Silicon Diffused Power Transistor

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Manufacturer	WEEN [WeEn Semiconductors]

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WeEn Semiconductors

Product data sheet

Silicon Diffused Power Transistor

PHE13009

STATIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES,ICBO

Collector cut-off current

1

V

BE = 0 V; VCE = VCESMmax

-

1.0

mA

I

CES

V

BE = 0 V; VCE = VCESMmax;

-

5.0

mA

T

j = 125 ˚C

I

CEO

Collector cut-off current

V

CEO = VCEOMmax (400V)

-

0.1

mA

I

EBO

Emitter cut-off current

V

EB = 9 V; IC = 0 A

-

1

mA

V

CEOsust

Collector-emitter sustaining voltage

I

B = 0 A; IC = 10 mA;

400

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

C = 5.0 A;IB = 1.0 A

-

0.32

1.0

V

I

C = 8.0 A;IB = 1.6 A

-

2.0

V

BEsat

Base-emitter saturation voltage

I

C = 5.0 A;IB = 1.0 A

-

1.0

1.3

V

I

C = 8.0 A;IB = 1.6 A

-

1.1

1.6

V

h

FE

DC current gain

I

C = 5.0 A; VCE = 5 V

8

-

40

h

FEsat

I

C = 8.0 A; VCE = 5 V

6

-

30

DYNAMIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (resistive load)

I

Con = 5 A; IBon = -IBoff = 1 A;

R

L = 75 ohms; VBB2 = 4 V;

t

s

Turn-off storage time

2.2

3.3

µs

t

f

Turn-off fall time

0.26

0.7

µs

Switching times (inductive load)

I

Con = 5 A; IBon = 1 A; LB = 1 µH;

-V

BB = 5 V

t

s

Turn-off storage time

1.35

2.3

µs

t

f

Turn-off fall time

0.1

0.5

µs

Switching times (inductive load)

I

Con = 5A; IBon = 1 A; LB = 1 µH;

-V

BB = 5 V; Tj = 100 ˚C

t

s

Turn-off storage time

-

3.2

µs

t

f

Turn-off fall time

-

0.9

µs

1 Measured with half sine-wave voltage (curve tracer).

March

2018

2

Rev 1.

100

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