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PHE13005X Datasheet(PDF) 6 Page - WeEn Semiconductors

Part No. PHE13005X
Description  Silicon diffused power transistor
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Maker  WEEN [WeEn Semiconductors]
Homepage  http://www.ween-semi.com
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PHE13005X Datasheet(HTML) 6 Page - WeEn Semiconductors

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WeEn Semiconductors
PHE13005X
Silicon diffused power transistor
PHE13005X
Product data sheet
All information provided in this document is subject to legal disclaimers.
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
26 April 2018
6 / 13
9. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
ICES
collector-emitter cut-off
current
VBE = 0 V; VCE = 700 V; Tj = 25 °C
-
-
1
mA
VBE = 0 V; VCE = 700 V; Tj = 100 °C
-
-
5
mA
ICBO
collector-base cut-off
current
VCB = 700 V; IE = 0 A; Th = 25 °C
-
-
1
mA
ICEO
collector-emitter cut-off
current
VCEO = 400 V; IB = 0 A; Th = 25 °C
-
-
0.1
mA
IEBO
emitter-base cut-off
current
VEB = 9 V; IC = 0 A; Th = 25 °C
-
-
1
mA
VCEOsus
collector-emitter
sustaining voltage
IB = 0 A; IC = 10 mA; LC = 25 mH;
Th = 25 °C; Fig. 6; Fig. 7
400
-
-
V
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 0.2 A; Th = 25 °C;
Fig. 8; Fig. 9
-
0.1
0.5
V
IC = 2 A; IB = 0.5 A; Th = 25 °C;
Fig. 8; Fig. 9
-
0.2
0.6
V
IC = 4 A; IB = 1 A; Th = 25 °C;
Fig. 8; Fig. 9
-
0.3
1
V
VBEsat
base-emitter saturation
voltage
IC = 1 A; IB = 0.2 A; Th = 25 °C;
Fig. 10
-
0.85
1.2
V
IC = 2 A; IB = 0.5 A; Th = 25 °C;
Fig. 10
-
0.92
1.6
V
hFE
DC current gain
IC = 1 A ; VCE = 5 V; Th = 25 °C;
Fig. 11
12
20
40
IC = 2 A ; VCE = 5 V; Th = 25 °C;
Fig. 11
10
17
28
Dynamic characteristics
ts
storage time
IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A;
RL = 75 Ω;Th = 25 °C; resistive load;
Fig. 12; Fig. 13
-
2.7
4
μs
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 μH; Th = 25 °C; inductive load;
Fig. 14; Fig. 15
-
1.2
2
μs
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 μH; Th = 100 °C; inductive load;
Fig. 14; Fig. 15
-
1.4
4
μs
tf
fall time
IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A;
RL = 75 Ω;Th = 25 °C; resistive load;
Fig. 12; Fig. 13
-
0.3
0.9
μs
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 μH; Th = 25 °C; inductive load;
Fig. 14; Fig. 15
-
0.1
0.5
μs
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 μH; Th = 100 °C; inductive load;
Fig. 14; Fig. 15
-
0.16
0.9
μs


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