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STTH15L06 Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH15L06 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 8 page STTH15L06 4/8 Figure 9: Relative variations of dynamic parameters versus junction temperature Figure 10: Transient peak forward voltage versus dIF/dt (typical values) Figure 11: Forward recovery time versus dIF/dt (typical values) Figure 12: Junction capacitance versus reverse voltage applied (typical values) Figure 13: Thermal resistance junction to ambient versus copper surface under tab (epoxy FR4, eCU=35µm) (D 2PAK) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 IRM QRR trr S factor T (°C) j I=I Reference: T =125°C F F(AV) j V =400V R 0 1 2 3 4 5 6 7 8 9 10 11 12 0 50 100 150 200 250 300 350 400 450 500 V (V) FP dI /dt(A/µs) F I=I T =125°C F F(AV) j 0 50 100 150 200 250 300 0 100 200 300 400 500 t (ns) fr dI /dt(A/µs) F I=I T =125°C FF(AV) j V =1.1 x V max. FR F 10 100 1000 1 10 100 1000 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 R (°C/W) th(j-a) S (cm²) CU |
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