●
●
●
▲
◀
●
●
●
▲
◀
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VDSS
Drain to Source Voltage
30
V
ID
Continuous Drain Current(@TC = 25°C)
12
A
Continuous Drain Current(@TC = 100°C)
7.7
A
IDM
Drain Current Pulsed
(Note 1)
30
A
VGS
Gate to Source Voltage
±20
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
30
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
7.0
V/ns
PD
Total Power Dissipation(@TA = 25 °C)
2.5
W
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
42
W
0.34
W/°C
TSTG, TJ
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
°C
TL
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Units
Min.
Typ.
Max.
RθJC
Thermal Resistance, Junction-to-Case
-
-
3
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
50
°C/W
SFD3055L
December, 2002. Rev. 0.
1/7
Features
■
Low RDS(on) (0.15Ω )@VGS=10V
Low RDS(on) (0.30Ω )@VGS=4.5V
■
Low Gate Charge (Typical 6.5nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
■
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
SemiWell Semiconductor
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Symbol
2. Drain
3. Source
1. Gate
Logic N-Channel MOSFET
D-PACK (TO-252)
1
2
3
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