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NX26F011A Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part No. NX26F011A
Description  1M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE
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Maker  ETC1 [List of Unclassifed Manufacturers]
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NX26F011A Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers

 
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NexFlash Technologies, Inc.
3
PRELIMINARY NXSF009A-0599
05/05/99 ©
NX26F011A
NX26F041A
....
....
NX26F011A or
NX26F041A
U0
NX26F011A or
NX26F041A
U8
NX26F011A or
NX26F041A
U9
NX26F011A or
NX26F041A
U10
NX26F011A or
NX26F041A
U11
NX26F011A or
NX26F041A
U1
NX26F011A or
NX26F041A
U2
NX26F011A or
NX26F041A
U3
SCK
SIO
0A0
0A1
0A2
1A3
1A0
0A1
0A2
1A3
0A0
1A1
0A2
1A3
1A0
1A1
0A2
1A3
1A0
1A1
0A2
0A3
0A0
1A1
0A2
0A3
1A0
0A1
0A2
0A3
0A0
0A1
0A2
0A3
Figure 2. NX26F011A or NX26F041A Used in a Multi-device Configuration with up to 16-Devices on the 2-wire NSX
FUNCTIONAL OVERVIEW
The
NexFlash NX26F011A and NX26F041A provide up to
1M-bits or 4M-bits of non-volatile memory organized as 512
or 2,048 small sectors of 264 bytes (4,288 bits) each (Figure
3). Each sector is individually addressable using basic
instruction sequences and control functions communicated
through the devices 2-wire NXS interface.
Read and Erase/Write Instruction Sequences
The NX26F011A and NX26F041A have two basic instruc-
tion sequences: Read and Erase/Write. Unlike some other
Flash technologies, the erase and write operations of the
NX26F011A and NX26F041A are performed together in
one single operation (as fast as 5 ms per sector). Thus,
pre-erase of the memory is not necessary.
Both Read and Erase/Write instructions are made up of a
series of serial bit fields that include command, sector
address, device address, and sector data. The Read
instruction sequence also allows the device to be polled for
Ready/Busy status.
Sector 0 (0000H)
2112 Bits (264 Bytes) Per Sector
Sector 1 (0001H)
Sector 2 (0002H)
Sectors 3-2045/4093
(0003-1FD/7FD)
Sector 510/2046 (1FE/1FE)
Sector 511/2047 (1FF/7FF)
Figure 3. NX26F011A and NX26F041A Array


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