ZXTN2007Z datasheet(4/6 Pages) ZETEX

Part #	ZXTN2007Z

Description	30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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ZXTN2007Z

SEMICO NDUC TORS

ISSUE 1 - JUNE 2005

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

Collector-base breakdown voltage

BVCBO

80

125

V

IC=100 A

Collector-emitter breakdown voltage

BVCER

80

125

V

IC=1 A, RB 1k

Collector-emitter breakdown voltage

BVCEO

30

40

V

IC=10mA*

Emitter-base breakdown voltage

BVEBO

78.1

V

IE=100 A

Collector cut-off current

ICBO

20

0.5

nA

A

VCB=70V

V

CB=70V, Tamb=100 C

Collector cut-off current

ICER

R

1k

20

0.5

nA

A

VCB=70V

V

CB=70V, Tamb=100 C

Emitter cut-off current

IEBO

10

nA

VEB=6V

Collector-emitter saturation voltage

VCE(SAT)

22

25

40

90

150

35

45

60

115

190

mV

IC=0.5A, IB=20mA*

I

C=1A, IB=100mA*

I

C=1A, IB=20mA*

I

C=2A, IB=20mA*

I

C=6.5A, IB=300mA*

Base-emitter saturation voltage

VBE(SAT)

1000

1100

mV

IC=6.5A, IB=300mA*

Base-emitter turn-on voltage

VBE(ON)

890

1000

mV

IC=6.5A, VCE=1V*

Static forward current transfer ratio

hFE

100

20

175

200

150

30

300

IC=10mA, VCE=1V*

I

C=1A, VCE=1V*

I

C=7A, VCE=1V*

I

C=20A, VCE=1V*

Transition frequency

fT

140

MHz IC=100mA, VCE=10V

f=50MHz

Output capacitance

COBO

48

pF

VCB=10V, f=1MHz*

Switching times

tON

tOFF

37

425

ns

IC=1A, VCC=10V,

IB1=-IB2=100mA

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

* Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

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