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SI5517DU Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI5517DU
Description  N- and P-Channel 20-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI5517DU Datasheet(HTML) 2 Page - Vishay Siliconix

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Vishay Siliconix
SPICE Device Model Si5517DU
www.vishay.com
Document Number: 74130
S-52018
⎯Rev. A, 03-Oct-05
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
Static
VDS = VGS, ID = 250 μA
N-Ch
0.50
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 μA
P-Ch
0.80
VDS < 5 V, VGS = 4.5 V
N-Ch
117
On-State Drain Current
a
ID(on)
VDS < −5 V, VGS = −4.5 V
P-Ch
60
A
VGS = 4.5 V, ID = 4.4 A
N-Ch
0.032
0.032
VGS = −4.5 V, ID = −3.3 A
P-Ch
0.063
0.060
VGS = 2.5 V, ID = 4.1 A
N-Ch
0.038
0.037
VGS = −2.5 V, ID = −2.8 A
P-Ch
0.082
0.083
VGS = 1.8 V, ID = 1.8 A
N-Ch
0.046
0.046
Drain-Source On-State Resistance
a
rDS(on)
VGS = −1.8 V, ID = −0.76 A
P-Ch
0.107
0.108
Ω
VDS = 10 V, ID = 4.4 A
N-Ch
23
22
Forward Transconductance
a
gfs
VDS = −10 V, ID = −3.3 A
P-Ch
11
9
S
IS = 1.2 A
N-Ch
0.72
0.80
Diode Forward Voltage
a
VSD
IS = −1A
P-Ch
0.78
- 080
V
Dynamic
b
N-Ch
605
520
Input Capacitance
Ciss
P-Ch
589
455
N-Ch
96
100
Output Capacitance
Coss
P-Ch
103
105
N-Ch
62
60
Reverse Transfer Capacitance
Crss
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = −10 V, VGS = 0 V, f = 1 MHz
P-Ch
57
65
pF
VDS = 10 V, VGS = 8 V, ID = 4.4 A
N-Ch
8.1
10.5
VDS = − 10 V, VGS = −8 V, ID = −4.6 A
P-Ch
8.4
9.1
N-Ch
5
6
Total Gate Charge
Qg
P-Ch
5
5.5
N-Ch
0.91
0.91
Gate-Source Charge
Qgs
P-Ch
0.75
0.75
N-Ch
0.70
0.70
Gate-Source Charge
Qgs
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 4.4 A
P-Channel
VDS = −10 V, VGS = −4.5 V, ID = −1.8 A
P-Ch
1.5
1.5
nC
Notes
a. Pulse test; pulse width
≤ 300 μs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.


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