MRF6P3300HR3 MRF6P3300HR5

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with

frequencies from 470 to 860 MHz. The high gain and broadband performance

of this device make it ideal for large - signal, common - source amplifier

applications in 32 volt analog or digital television transmitter equipment.

Power Gain — 20.2 dB

Drain Efficiency — 44.1%

IMD — -30.8 dBc

Power Gain — 20.4 dB

Drain Efficiency — 29%

ACPR @ 3.9 MHz Offset — -57 dBc @ 20 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Designed for Push-Pull Operation Only

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Pb-Free and RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +68

Vdc

Gate-Source Voltage

-0.5, +12

Vdc

Derate above 25°C

761

4.3

W

W/°C

Storage Temperature Range

- 65 to +150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 300 W CW

Case Temperature 82°C, 220 W CW

Case Temperature 79°C, 100 W CW

Case Temperature 81°C, 60 W CW

0.23

0.24

0.27

0.27

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Document Number: MRF6P3300H

Rev. 0, 9/2005

Freescale Semiconductor

Technical Data

MRF6P3300HR3

MRF6P3300HR5

470-860 MHz, 300 W, 32 V

LATERAL N-CHANNEL

RF POWER MOSFET

CASE 375G-04, STYLE 1

NI-860C3

 Freescale Semiconductor, Inc., 2005. All rights reserved.