S-1003CA43I-M5T1U datasheet(11/42 Pages) ABLIC

Part #	S-1003CA43I-M5T1U

Description	MANUAL RESET BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) HIGH-ACCURACY VOLTAGE DETECTOR

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MANUAL RESET BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) HIGH-ACCURACY VOLTAGE DETECTOR

Rev.1.0_03

S-1003 Series

11



Electrical Characteristics

1. Nch open-drain output product

Table 10

(Ta =

25°C unless otherwise specified)

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Test

Circuit

Detection voltage

*1

VDET

1.2 V

 VDET  2.2 V

VDET(S)

 0.022

VDET(S)

 0.022

V

1

2.2 V

 VDET  5.0 V

VDET(S)

 0.99

VDET(S)

 1.01

V

1

Hysteresis width

VHYS



VDET

 0.03

VDET

 0.05

VDET

 0.07

V

1

Current consumption

ISS

VDD = VDET(S)  1.0 V



0.50

0.90

A

2

Operation voltage

VDD



0.95



10.0

V

1

Output current

IOUT

Output transistor

Nch

VDS

*2 = 0.5 V

MR pin active

VDD = 0.95 V

0.59

1.00



mA

3

VDD = 1.2 V

0.73

1.33



mA

3

VDD = 2.4 V

1.47

2.39



mA

3

VDD = 4.8 V

1.86

2.50



mA

3

Leakage current

ILEAK

Output transistor

Nch

VDD = 10.0 V, VOUT = 10.0 V

MR pin non-active



0.08

A

3

Delay time

*3

tD

CD = 4.7 nF

8.5

10.0

11.5

ms

4

Detection voltage

temperature

coefficient

*4

VDET

Ta  VDET Ta = 40°C to 85°C



100

350

ppm/°C

1

MR pin

input voltage "H"

VMRH

NA type

(MR pin logic active "L")

VDD

 0.3



V

6

NB type

(MR pin logic active "H")

1.2



V

6

MR pin

input voltage "L"

VMRL

NA type

(MR pin logic active "L")



VDD

 1.2

V

6

NB type

(MR pin logic active "H")



0.3

V

6

MR pin

input resistance

RMR



0.5

1.0

1.6

M



6

*1.

VDET: Actual detection voltage value, VDET(S): Set detection voltage value (the center value of the detection voltage

range in Table 3 or Table 4.)

*2.

VDS: Drain-to-source voltage of the output transistor

*3.

The time period from when the pulse voltage of 0.95 V

 VDET(S)1.0 V is applied to the VDD pin to when VOUT

reaches VDD  0.9, after the output pin is pulled up to VDD by the resistance of 100 k

*4.

The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.

  VDET

Ta

[]

mV/°C

*1 = VDET(S) (typ.)[]

V

*2 

  VDET

Ta  VDET []

ppm/°C

*3  1000

*1. Temperature change of the detection voltage

*2. Set detection voltage

*3. Detection voltage temperature coefficient

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