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2N2222AU Datasheet(PDF) 1 Page - First Silicon Co., Ltd

Part No. 2N2222AU
Description  General Purpose Transistor
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Maker  FS [First Silicon Co., Ltd]
Homepage  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

2N2222AU Datasheet(HTML) 1 Page - First Silicon Co., Ltd

  2N2222AU Datasheet HTML 1Page - First Silicon Co., Ltd 2N2222AU Datasheet HTML 2Page - First Silicon Co., Ltd 2N2222AU Datasheet HTML 3Page - First Silicon Co., Ltd  
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General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They
are housed in the SC-323/SC−70 package which
is designed for
low power surface mount applications.
Features
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
VCEO
40
Vdc
Collector−Base Voltage
VCBO
75
Vdc
Emitter−Base Voltage
VEBO
6.0
Vdc
Collector Current
− Continuous
IC
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total
Device Dissipation (Note 1)
TA = 25°C
PD
150
mW
Thermal Resistance,
Junction−to−Ambient
R JA
833
°C/W
Operating and Storage Junction
T
emperature Range
TJ, Tstg
−55 to +150
°C
Device
Maring
Shipping
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector
−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc
Collector
−Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
75
Vdc
Emitter −Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
Vdc
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
IBL
20
nAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
ICEX
10
nAdc
2N2222AU
P1
3000 / T
ape & Reel
compliance with RoHS requirements.
We declare that the material of product
SEMICONDUCTOR
TECHNICAL DATA
2N2222AU
2008. 02. 18
1/3
Revision No : 1
1
3
2
SC
-70 / SOT– 323


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