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2N2222AS Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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2N2222AS Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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General Purpose Transistor NPN Silicon • MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc Emitter−Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 1) TA = 25°C PD 350 mW Thermal Resistance, Junction−to−Ambient R JA 357 °C/W Operating and Storage Junction T emperature Range TJ, Tstg −55 to +150 °C Device Marking Shipping † ORDERING INFORMATION COLLECTOR 3 1 BASE 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector −Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 75 − Vdc Emitter −Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) IBL − 20 nAdc Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) ICEX − 10 nAdc 2N2222AS 1P 3000 / T ape & Reel compliance with RoHS requirements. We declare that the material of product SEMICONDUCTOR TECHNICAL DATA 2N2222AS 2011. 12. 06 1/6 Revision No : 2 SOT–23 1 3 2 (Note 1) |
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