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2N2222AE Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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2N2222AE Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 3 page 
ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) HFE 35 50 75 100 40 − − − − − − Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.3 1.0 Vdc Base −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) 0.6 − 1.2 2.0 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 250 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 pF Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie 0.25 1.25 k Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre − 4.0 X 10−4 Small −Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe 75 375 − Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe 25 200 mhos Noise Figure (VCE = 10 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz) NF − 4.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = 30 Vdc, V BE = −0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 10 ns Rise Time tr − 25 Storage Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 ns Fall Time tf − 60 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤2.0%. 2N2222AE 2008. 02. 18 1/3 Revision No : 0 |
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