Absolute Maximum Ratings (Notes 2, 3)
If Military/Aerospace specified devices are required,
please contact the CSMSC Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
6.0V
Storage Temperature
−65˚C to +150˚C
Input Voltage
−0.3V to V
DD +0.3V
Power Dissipation (P
D) (Note 4)
Internally Limited
ESD Susceptibility (Note 5)
3.5kV
ESD Susceptibility (Note 6)
250V
Junction Temperature (T
J)
150˚C
Soldering Information (Note 1)
Small Outline Package
Vapor Phase (60 seconds)
215˚C
Infrared (15 seconds)
220˚C
Thermal Resistance
θ
JC (MSOP)
56˚C/W
θ
JA (MSOP)
210˚C/W
θ
JC (SOP)
35˚C/W
θ
JA (SOP)
170˚C/W
θ
JA (LLP)
117˚C/W (Note 10)
θ
JA (LLP)
150˚C/W (Note 11)
Operating Ratings (Notes 2, 3)
Temperature Range
T
MIN ≤ TA ≤ TMAX
−40˚C
≤ T
A ≤ 85˚C
Supply Voltage
2.0V
≤ V
CC ≤ 5.5V
Electrical Characteristics V
DD =5V (Notes 2, 3)
The following specifications apply for V
DD = 5V, RL =16Ω unless otherwise stated. Limits apply for TA = 25˚C.
Symbol
Parameter
Conditions
HWD2119
Units
(Limits)
Typical
Limit
(Note 7)
(Notes 8, 9)
I
DD
Quiescent Power Supply Current
V
IN = 0V, Io = 0A
1.5
3.0
mA (max)
I
SD
Shutdown Current
V
PIN1 =VDD (Note 12)
1.0
5.0
µA (max)
V
SDIH
Shutdown Voltage Input High
4.0
V (min)
V
SDIL
Shutdown Voltage Input Low
1.0
V (max)
V
OS
Output Offset Voltage
V
IN = 0V
5
50
mV (max)
P
O
Output Power
THD = 10%, f
IN = 1kHz
350
mW
THD = 10%, f
IN = 1kHz, RL =8Ω
300
mW
THD+N
Total Harmonic Distortion + Noise
P
O = 270mWRMS,AVD =2,fIN =
1kHz
1%
Electrical Characteristics V
DD =3V (Notes 2, 3)
The following specifications apply for V
DD = 3V and RL =16Ω load unless otherwise stated. Limits apply to TA = 25˚C.
Symbol
Parameter
Conditions
HWD2119
Units
(Limits)
Typical
Limit
(Note 7)
(Notes 8, 9)
I
DD
Quiescent Power Supply Current
V
IN = 0V, Io = 0A
1.0
3.0
mA (max)
I
SD
Shutdown Current
V
PIN1 =VDD (Note 12)
0.7
5.0
µA (max)
V
SDIH
Shutdown Voltage Input High
2.4
V (min)
V
SDIL
Shutdown Voltage Input Low
0.6
V (max)
V
OS
Output Offset Voltage
V
IN = 0V
5
50
mV
P
O
Output Power
THD = 10%, f
IN = 1kHz
110
mW
THD = 10%, f
IN = 1kHz, RL =8Ω
90
mW
THD+N
Total Harmonic Distortion + Noise
P
O = 80mWRMS,AVD =2,fIN =
1kHz
1%
2
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