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VHFD37-16IO1 Datasheet(PDF) 2 Page - IXYS Corporation

Part No. VHFD37-16IO1
Description  Half Controlled Single Phase Rectifier Bridge Including Freewheeling Diode and Field Diodes
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

VHFD37-16IO1 Datasheet(HTML) 2 Page - IXYS Corporation

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© 2000 IXYS All rights reserved
2 - 3
VHFD 37
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
x for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol
Test Conditions
Maximum Ratings
I
FAV
T
H = 85
°C, per Diode
4
A
I
FAVM
per diode
4
A
I
FRMS
per diode
6
A
I
FSM
T
VJ = 45
°C;
t = 10 ms (50 Hz), sine
100
A
V
R = 0 V
t = 8.3 ms (60 Hz), sine
110
A
T
VJ = TVJM
t = 10 ms (50 Hz), sine
85
A
V
R = 0 V
t = 8.3 ms (60 Hz), sine
94
A
I2t
T
VJ = 45
°C
t = 10 ms (50 Hz), sine
50
A2s
V
R = 0 V
t = 8.3 ms (60 Hz), sine
50
A2s
T
VJ = TVJM
t = 10 ms (50 Hz), sine
36
A2s
V
R = 0 V
t = 8.3 ms (60 Hz), sine
37
A2s
I
R
V
R = VRRM
T
VJ = TVJM
1mA
T
VJ = 25
°C
0.15
mA
V
F
I
F = 21 A; TVJ = 25
°C
1.83
V
V
T0
For power-loss calculations only (T
VJ = 125°C)
0.9
V
r
T
50
m
W
R
thJC
per diode; DC current
4.4
K/W
R
thJH
per diode; DC current
5.2
K/W
Field Diodes
Symbol
Test Conditions
Characteristic Values
I
R, ID
V
R = VRRM; VD = VDRM
T
VJ = TVJM
£
5mA
T
VJ = 25
°C
£
0.3
mA
V
T, VF
I
T, IF = 45 A; TVJ = 25
°C
£
1.45
V
V
T0
For power-loss calculations only (T
VJ = 125°C)
0.85
V
r
T
13
m
W
V
GT
V
D = 6 V;
T
VJ = 25
°C
£
1.0
V
T
VJ = -40
°C
£
1.2
V
I
GT
V
D = 6 V;
T
VJ = 25
°C
£
65
mA
T
VJ = -40
°C
£
80
mA
T
VJ = 125
°C
£
50
mA
V
GD
T
VJ = TVJM;VD = 2/3 VDRM
£
0.2
V
I
GD
T
VJ = TVJM;VD = 2/3 VDRM
£
5mA
I
L
I
G = 0.3 A; tG = 30
ms; T
VJ = 25
°C
£
150
mA
di
G/dt = 0.3 A/
ms;
T
VJ = -40
°C
£
200
mA
T
VJ = 125
°C
£
100
mA
I
H
T
VJ = 25
°C; V
D = 6 V; RGK =
¥£
100
mA
t
gd
T
VJ = 25
°C; V
D = 1/2 VDRM
£
2
ms
I
G = 0.3 A; diG/dt = 0.3 A/
ms
t
q
T
VJ = 125
°C, I
T = 15 A, tP = 300
ms, V
R = 100 V
typ.
150
ms
Q
r
di/dt = -10 A/
ms, dv/dt = 20 V/ms, V
D = 2/3 VDRM
75
mC
R
thJC
per thyristor (diode); DC current
1.2
K/W
per module
0.3
K/W
R
thJH
per thyristor (diode); DC current
1.55
K/W
per module
0.39
K/W
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time t
gd
1
10
100
1000
0.1
1
10
I
G
V
G
mA
1: I
GT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
V
4: P
GAV = 0.5 W
5: PGM = 1 W
6: PGM = 10 W
I
GD, TVJ = 125°C
4
2
1
5
6
10
100
1000
1
10
100
1000
µs
t
gd
T
VJ = 25°C
typ.
Limit
mA
I
G
3


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