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IKW03N120H2 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IKW03N120H2 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 15 page IKP03N120H2, IKB03N120H2 IKW03N120H2 Power Semiconductors 3 Rev. 2, Mar-04 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time t d(on) - 9.2 - Rise time t r - 5.2 - Turn-off delay time t d (off) - 281 - Fall time t f - 29 - ns Turn-on energy E on - 0.14 - Turn-off energy E off - 0.15 - Total switching energy E ts T j=25 °C, V CC=800V, IC=3A , V GE=15V/0V, R G =82 Ω, Lσ 2) =180nH, Cσ 2) =40pF Energy losses include “tail” and diode 3) reverse recovery. - 0.29 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t rr - 42 - ns Diode reverse recovery charge Q rr - 0.23 - µC Diode peak reverse recovery current I rr m - 10.3 - A Diode current slope di F /dt - 993 - Diode peak rate of fall of reverse recovery current during tb di rr/dt T j=25 °C, V R =800V, IF =3A, R G =82 Ω - 1180 - A/ µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time t d(on) - 9.4 - Rise time t r - 6.7 - Turn-off delay time t d (off) - 340 - Fall time t f - 63 - ns Turn-on energy E on - 0.22 - Turn-off energy E off - 0.26 - Total switching energy E ts T j=150 °C V CC=800V, I C =3A, V GE=15V/0V, R G =82 Ω, Lσ 2) =180nH, Cσ 2) =40pF Energy losses include “tail” and diode 3) reverse recovery. - 0.48 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t rr - 125 - ns Diode reverse recovery charge Q rr - 0.51 - µC Diode peak reverse recovery current I rr m - 12 - A Diode current slope di F /dt - 829 - Diode peak rate of fall of reverse recovery current during tb di rr/dt T j=150 °C V R =800V, IF =3A, R G =82 Ω - 540 - A/ µs 2) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E 3) Commutation diode from device IKP03N120H2 |
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