IHW40T120 datasheet(4/14 Pages) INFINEON

Part #	IHW40T120

Description	IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IHW40T120

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Soft Switching Series

Power Semiconductors

4

Rev. 2 Mar-04

Switching Characteristic, Inductive Load, at Tj=150

°C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

td(on)

-

52

-

Rise time

tr

-

40

-

Turn-off delay time

td(off)

-

580

-

Fall time

tf

-

120

-

ns

Turn-on energy

Eon

-

5.0

-

Turn-off energy

Eoff

-

5.4

-

Total switching energy

Ets

Tj=150

°C

VCC=600V,IC=40A,

VGE=0/15V,

RG= 15

Ω,

Lσ

1) =180nH,

Cσ

1) =39pF

Energy losses include

“tail” and diode

reverse recovery.

-

10.4

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

-

300

ns

Diode reverse recovery charge

Qrr

-

3540

nC

Diode peak reverse recovery current

Irrm

Tj=150

°C

VR=800V, IF=18A,

diF/dt=800A/

µs

-

25.3

A

1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

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IHW40T120 Datasheet(PDF) 4 Page - Infineon Technologies AG

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