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AS7C513 Datasheet(PDF) 6 Page - Alliance Semiconductor Corporation

Part No. AS7C513
Description  5V/3.3V 32Kx6 CMOS SRAM
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Maker  ALSC [Alliance Semiconductor Corporation]
Homepage  http://www.alsc.com
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AS7C513 Datasheet(HTML) 6 Page - Alliance Semiconductor Corporation

 
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AS7C513
AS7C3513
®
3/23/01; v.1.0
Alliance Semiconductor
P. 6 of 10
Data retention characteristics (over the operating range)13
Data retention waveform
AC test conditions
Notes
1During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
2
This parameter is sampled, but not 100% tested.
3
For test conditions, see AC Test Conditions, Figures A, B, and C.
4
These parameters are specified with CL = 5pF, as in Figures B or C. Transition is measured ±500mV from steady-state voltage.
5
This parameter is guaranteed, but not 100% tested.
6WE is High for read cycle.
7CE and OE are Low for read cycle.
8
Address valid prior to or coincident with CE transition Low.
9
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CE or WE must be High during address transitions. Either CE or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 Not applicable.
13 2V data retention applies to the commercial operating range only.
14 C=30pF, except on High Z and Low Z parameters, where C=5pF.
Parameter
Symbol
Test conditions
Min
Max
Unit
VCC for data retention
VDR
VCC = 2.0V
CE
≥ V
CC–0.2V
VIN ≥ VCC–0.2V or
VIN ≤ 0.2V
2.0
V
Data retention current
ICCDR
500
µA
Chip deselect to data retention time
tCDR
0–
ns
Operation recovery time
tR
tRC
–ns
Input leakage current
| I
LI |
–1
µA
VCC
CE
tR
tCDR
Data retention mode
VCC
VDR ≥ 2.0V
VIH
VIH
VDR
VCC
350
C(14)
320
Dout
GND
+3.3V
Figure C: 3.3V Output load
- Output load: see Figure B or Figure C.
- Input pulse level: GND to 3.0V. See Figure A.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
168
Thevenin equivalent:
Dout
+1.728V (5V and 3.3V)
255
C(14)
480
Dout
GND
+5V
Figure B: 5V Output load
10%
90%
10%
90%
GND
+3.0V
Figure A: Input pulse
2 ns


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