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M390S2858DT1 Datasheet(PDF) 8 Page - Samsung semiconductor

Part # M390S2858DT1
Description  128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

M390S2858DT1 Datasheet(HTML) 8 Page - Samsung semiconductor

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REV. 0.0 Jan. 2002
M390S2858DT1
PC133 Registered DIMM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
Symbol
-7C
-7A
Unit
Note
Min
Max
Min
Max
CLK cycle time
CAS latency=3
tCC
7.5
1000
7.5
1000
ns
1
CAS latency=2
7.5
10
CLK to valid
output delay
CAS latency=3
tSAC
5.4
5.4
ns
1,2
CAS latency=2
5.4
6
Output data
hold time
CAS latency=3
tOH
3
3
ns
2
CAS latency=2
3
3
CLK high pulse width
tCH
2.5
2.5
ns
3
CLK low pulse width
tCL
2.5
2.5
ns
3
Input setup time
tSS
1.5
1.5
ns
3
Input hold time
tSH
0.8
0.8
ns
3
CLK to output in Low-Z
tSLZ
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
tSHZ
5.4
5.4
ns
CAS latency=2
5.4
6
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.


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